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| FDS6298 30V N-Channel Fast Switching PowerTrench(R) MOSFET April 2007 FDS6298 30V N-Channel Fast Switching PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. (R) tm Features 13 A, 30 V. RDS(ON) = 9 m @ VGS = 10 V RDS(ON) = 12 m @ VGS = 4.5 V Low gate charge (10nC @ VGS=5V) Very low Miller Charge (3nC) Low Rg (1 Ohm) ROHS Compliant Applications Control Switch for DC-DC Buck converters Notebook Vcore Telecom / Networking Point of Load D D SO-8 D D DD D D 5 6 4 3 2 1 Pin 1 SO-8 G SG S S SS S TA=25oC unless otherwise noted 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD EAS TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Parameter Ratings 30 20 (Note 1a) Units V V A W mJ C 13 50 3.0 1.2 181 -55 to +150 Power Dissipation for Single Operation Power Dissipation for Single Operation Single Pulse Avalanche Energy (Note 1a) (Note 1b) (Note 3) Operating and Storage Junction Temperature Range Thermal Characteristics RJA RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1b) (Note 1) 50 125 25 C/W C/W C/W Package Marking and Ordering Information Device Marking FDS6298 Device FDS6298 Reel Size 13'' Tape width 12mm Quantity 2500 units (c)2007 Fairchild Semiconductor Corporation FDS6298 Rev. C1 ( W) FDS6298 30V N-Channel Fast Switching PowerTrench(R) MOSFET Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ RDS(ON) gFS Ciss Coss Crss RG td(on) tr td(off) tf Qg Qgs Qgd TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage (Note 2) Test Conditions VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 10 V, ID = 13 A VGS = 4.5 V, ID = 12 A VGS= 10 V, ID = 13 A, TJ=125C VDS = 10 V, ID = 13 A Min Typ 30 1 0.3 30 1.7 -5 7.4 9.4 11 58 1108 310 109 1 11 5 27 7 10 3 3 Max 1 100 3 9 12 15 1.7 20 10 43 14 14 - Units V mV/C A nA V mV/C m S pF pF pF ns ns ns ns nC nC nC Off Characteristics On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) Dynamic Characteristics VDS = 15 V, V GS = 0 V, f = 1.0 MHz VGS = 15 mV, f = 1.0 MHz Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 - VDS = 15 V, ID = 13 A, VGS = 5 V Drain-Source Diode Characteristics VSD trr Qrr Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user' board design. s Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 2.1 A (Note 2) - 0.74 27 13 1.2 - V ns nC IF = 13 A, dIF/dt = 100 A/s a) 50C/W when mounted 2 on a 1in pad of 2 oz copper b) 125C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. Starting TJ = 25C, L = 3mH, IAS = 11A, VDD = 30V, VGS = 10V FDS6298 Rev. C1 (W) FDS6298 30V N-Channel Fast Switching PowerTrench(R) MOSFET Typical Characteristics 80 70 ID, DRAIN CURRENT (A) 60 50 40 30 20 10 0 0 2.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 6.0V 3.5.V 4.5V 4.0V 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.5 1 1.5 2 2.5 VGS = 3.0V 3.5V 4.0V 4.5V 5.0V 3.0V 6.0V 10V 0 10 20 30 40 50 60 70 80 VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.028 RDS(ON), ON-RESISTANCE (OHM) 1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 ID = 13A VGS = 10V ID = 6.5A 0.024 0.02 0.016 TA = 125oC 0.012 0.008 0.004 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) TA = 25oC -25 0 25 50 75 100 o 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. 80 70 ID, DRAIN CURRENT (A) 60 50 40 30 20 10 0 1.5 2 2.5 3 3.5 4 VGS, GATE TO SOURCE VOLTAGE (V) IS, REVERSE DRAIN CURRENT (A) VDS = 5V TA = -55oC 125o C 25oC Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 10 1 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS = 0V TA = 125oC 25oC -55oC Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6298 Rev. C1 (W) FDS6298 30V N-Channel Fast Switching PowerTrench(R) MOSFET Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 13A 8 VDS = 10V 20V 6 15V 1500 CISS 1200 CAPACITANCE (pF) f = 1MHz VGS = 0 V 900 4 600 COSS 300 CRSS 2 0 0 4 8 12 16 20 Qg, GATE CHARGE (nC) 0 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 RDS(ON) LIMIT 100s 1ms 10ms 100ms 1s 10s DC IAS, AVALANCHE CURRENT (A) 100 Figure 8. Capacitance Characteristics. ID, DRAIN CURRENT (A) 10 1 VGS = 10V SINGLE PULSE RJA = 125oC/W TA = 25 C o 10 25 0.1 125 0.01 0.01 0.1 1 10 100 1 0.01 0.1 1 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) tAV, TIME IN AVALANCHE (mS) Figure 9. Maximum Safe Operating Area. Figure 10. Unclamped Inductive Switching Capability 50 P(pk), PEAK TRANSIENT POWER (W) SINGLE PULSE R JA = 125C/W TA = 25C 40 30 20 10 0 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 Figure 11. Single Pulse Maximum Power Dissipation. FDS6298 Rev. C1 (W) (R) (R) (R) FDS6298 30V N-Channel Fast Switching PowerTrench(R) MOSFET Typical Characteristics r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RJA(t) = r(t) * RJA RJA = 125 C/W 0.1 0.1 0.05 0.02 P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.01 0.1 t1, TIME (sec) 1 10 100 1000 0.01 0.01 SINGLE PULSE 0.001 0.0001 0.001 Figure 12. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6298 Rev. C1 (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Across the board. Around the world.TM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM CTLTM Current Transfer LogicTM DOMETM 2 E CMOSTM (R) EcoSPARK EnSignaTM FACT Quiet SeriesTM (R) FACT (R) FAST FASTrTM FPSTM (R) FRFET GlobalOptoisolatorTM GTOTM HiSeCTM (R) i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM MICROCOUPLERTM MicroPakTM MICROWIRETM Motion-SPMTM MSXTM MSXProTM OCXTM OCXProTM (R) OPTOLOGIC (R) OPTOPLANAR PACMANTM PDP-SPMTM POPTM (R) Power220 (R) Power247 PowerEdgeTM PowerSaverTM Power-SPMTM (R) PowerTrench Programmable Active DroopTM (R) QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM ScalarPumpTM SMART STARTTM (R) SPM STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM (R) The Power Franchise TM TinyBoostTM TinyBuckTM (R) TinyLogic TINYOPTOTM TinyPowerTM TinyWireTM TruTranslationTM SerDesTM (R) UHC UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I26 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. No Identification Needed Full Production Obsolete Not In Production (c) 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com |
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